Abstract
Microwave Plasma Assisted Chemical Vapor Deposition (MPACVD) is a prominent method for synthesizing high-quality single crystal diamonds under comparatively low pressure and temperature. The synthesis conditions were optimized using the MPACVD method, at substrate temperatures from 800 oC to 900 oC, with gas pressures in the range of 150– 180 Torr and the volume concentrations of H2 and CH4 employed during deposition. The simultaneous changes in and analysis of the growth parameters enhanced the quality of the synthesized samples. An infrared pyrometer was utilized to determine the temperature of the substrate, while a mass flow controller regulated the flow rate of each gas. The application of the Low-Pressure High-Temperature (LPHT) process resulted in better-quality synthesized samples, as confirmed by Raman Spectroscopy as well High-Resolution X-Ray Diffraction (HRXRD). To confirm the diamond phase, Raman spectroscopy was utilized. HRXRD analysis was performed to evaluate the orientation of the crystallography phase in grown samples. The value of FWHM of the rocking curves in HRXRD reflects the quality of the homoepitaxial layer. The diamond crystals produced exhibit remarkable material characteristics that enable excellent performance in various applications, including medical diagnostics, radiation detection, optical components for laser windows in RF and microwave transmission, mechanical tools like cutting and brushing instruments and electrodes for electrochemical sensing.
Keywords: High Pressure, High Temperature, Microwave Plasma Assisted Chemical Vapor Deposition, Optical Properties, Single Crystal Diamond.